Package Information
www.vishay.com
TO-252AA Case Outline
Vishay Siliconix
E
b3
A
C2
DIM.
A
A1
b
b2
b3
C
C2
D
D1
E
MILLIMETERS
MIN. MAX.
2.18
2.38
-
0.127
0.64
0.88
0.76
1.14
4.95
5.46
0.46
0.61
0.46
0.89
5.97
6.22
4.10
-
6.35
6.73
MIN.
0.086
-
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
INCHES
MAX.
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
0.265
b
e1
e
b2
C
A1
E1
H
e
4.32 -
9.40 10.41
2.28 BSC
0.170 -
0.370 0.410
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
L3
L4
L5
1.40
0.89
-
1.01
1.78
1.27
1.02
1.52
0.055
0.035
-
0.040
0.070
0.050
0.040
0.060
ECN: T13-0359-Rev. O, 03-Jun-13 ?
E1
DWG: 5347
Notes
? Dimension L3 is for reference only.
? Xi’an, Mingxin, and GEM SH actual photo.
Revision: 03-Jun-13
1
Document Number: 71197
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SUD50N03-16P-GE3 MOSFET N-CH D-S 30V TO252
SUD50N04-05L-E3 MOSFET N-CH D-S 40V TO252
SUD50N04-09H-E3 MOSFET N-CH D-S 40V TO252
SUD50N04-16P-E3 MOSFET N-CH D-S 40V TO252
SUD50N04-37P-T4-E3 MOSFET N-CH D-S 40V TO252
SUD50N04-8M8P-4GE3 MOSFET N-CH 40V 50A TO-252
SUD50N06-07L-E3 MOSFET N-CH D-S 60V TO252
SUD50N06-08H-E3 MOSFET N-CH D-S 60V TO252
相关代理商/技术参数
SUD50N03-16P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-CHANNEL 30-V (D-S) MOSFET
SUD50N03-16P-E3 功能描述:MOSFET 30V 15A 40.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N03-16P-GE3 功能描述:MOSFET 30V 15A 40.8W 16mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N03-7M3P-E3 功能描述:MOSFET 30V 50A 65A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N04-05L 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175 C MOSFET
SUD50N04-05L-E3 功能描述:MOSFET 40V 115A 136W 5.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD50N04-06H 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175∩ MOSFET
SUD50N04-06H-E3 功能描述:MOSFET 40V 109A 136W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube